FDN327N applications load switch battery protection power management features 2 a, 20 v. r ds(on) = 70 m w @ v gs = 4.5 v r ds(on) = 80 m w @ v gs = 2.5 v r ds(on) = 120 m w @ v gs = 1.8 v low gate charge (4.5 nc typical) fast switching speed high performance trench technology for extremely low r ds(on) g d s supersot -3 tm d s g absolute maximum ratings t a =25 o c unless otherwise noted symbol parameter ratings units v dss drain-source voltage 20 v v gss gate-source voltage 8 v i d drain current ? continuous (note 1a) 2 a ? pulsed 8 power dissipation for single operation (note 1a) 0.5 p d (note 1b) 0.46 w t j , t stg operating and storage junction temperature range ?55 to +150 c thermal characteristics r q ja thermal resistance, junction-to-ambient (note 1a) 250 c/w r q jc thermal resistance, junction-to-case (note 1) 75 c/w package marking and ordering information device marking device reel size tape width quantity 327 FDN327N 7?? 8mm 3000 units 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com smd type smd type smd type product specification
electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain?source breakdown voltage v gs = 0 v, i d = 250 m a 20 v d bv dss d t j breakdown voltage temperature coefficient i d = 250 m a,referenced to 25 c 12 mv/ c i dss zero gate voltage drain current v ds = 16 v, v gs = 0 v 1 m a i gssf gate?body leakage, forward v gs = 8 v, v ds = 0 v 100 na i gssr gate?body leakage, reverse v gs = ?8 v, v ds = 0 v ?100 na on characteristics (note 2) v gs( th ) gate threshold voltage v ds = v gs , i d = 250 m a 0.4 0.7 1.5 v d v gs( th) d t j gate threshold voltage temperature coefficient i d = 250 m a,referenced to 25 c ?3 mv/ c r ds(on) static drain?source on?resistance v gs = 4.5 v, i d = 2.0 a v gs = 2.5 v, i d = 1.9 a v gs = 1.8 v, i d = 1.6 a v gs = 4.5v, i d = 2 a, t j = 125 c 40 49 65 55 70 80 120 103 m w i d(on) on?state drain current v gs = 4.5v, v ds = 5 v 8 a g fs forward transconductance v ds = 5v, i d = 2 a 11 s dynamic characteristics c iss input capacitance 423 pf c oss output capacitance 87 pf c rss reverse transfer capacitance v ds = 10 v, v gs = 0 v f = 1.0 mhz 48 pf switching characteristics (note 2) t d(on) turn?on delay time 6 12 ns t r turn?on rise time 6.5 13 ns t d(off) turn?off delay time 14 29 ns t f turn?off fall time v dd = 10 v, i d = 1 a, v gs = 4.5 v, r gen = 6 w 2 4 ns q g total gate charge 4.5 6.3 nc q gs gate?source charge 0.89 nc q gd gate?drain charge v ds = 10 v, i d = 2 a, v gs = 4.5 v 0.95 nc drain?source diode characteristics and maximum ratings i s maximum continuous drain?source diode forward current 0.42 a v sd drain?source diode forward voltage v gs = 0 v, i s = 0.42 a (note 2) 0.6 1.2 v notes: 1. r q ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. r q jc is guaranteed by design while r q ca is determined by the user's board design. a) 250 c/w when mounted on a 0.02 in 2 pad of 2 oz. copper. b) 270c/w when mounted on a minimum pad . scale 1 : 1 on letter size paper 2. pulse test: pulse width 300 m s, duty cycle 2.0% FDN327N product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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